Heterostructure Barrier Varactor Quintuplers for Terahertz Applications

J. Stake, T. Bryllert, A. Olsen, J. Vukusic
{"title":"Heterostructure Barrier Varactor Quintuplers for Terahertz Applications","authors":"J. Stake, T. Bryllert, A. Olsen, J. Vukusic","doi":"10.1109/EMICC.2008.4772265","DOIUrl":null,"url":null,"abstract":"We present progress and status of heterostructure barrier varactor quintupler sources for 170 GHz and 210 GHz (G-band). The source modules feature an ultra-compact waveguide block design, and a microstrip matching circuit on high-thermal-conductivity AlN to improve the power handling capability. Furthermore, we present progress on design and fabrication of integrated HBV circuits for terahertz applications.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2008.4772265","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

Abstract

We present progress and status of heterostructure barrier varactor quintupler sources for 170 GHz and 210 GHz (G-band). The source modules feature an ultra-compact waveguide block design, and a microstrip matching circuit on high-thermal-conductivity AlN to improve the power handling capability. Furthermore, we present progress on design and fabrication of integrated HBV circuits for terahertz applications.
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太赫兹应用的异质结构势垒变容管五倍器
介绍了170 GHz和210 GHz (g波段)异质结构势垒变容器五倍频源的研究进展和现状。源模块采用超紧凑波导块设计,并在高导热AlN上采用微带匹配电路,以提高功率处理能力。此外,我们还介绍了用于太赫兹应用的集成HBV电路的设计和制造的进展。
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