Shooting method calculation of temperature dependence of transition energy for quantum well structure

Bunjong Jukgoljun, W. Pecharapa, W. Techitdheera
{"title":"Shooting method calculation of temperature dependence of transition energy for quantum well structure","authors":"Bunjong Jukgoljun, W. Pecharapa, W. Techitdheera","doi":"10.1117/12.799424","DOIUrl":null,"url":null,"abstract":"The ground state transition energy as various temperatures of a single quantum well structure has been calculated. The numerical technique called shooting method was developed to get eigen values and eigen functions. Passler's model and Aspnes's equation are adopted to calculate the energy gap (Eg) of Al0.3Ga0.7As and GaAs respectively. Our calculation has been tested by comparing the results to PL experimental data of Al0.3Ga0.7As / GaAs single quantum well. Good agreement has been found in the low temperature range (less than 40 K) and fair result has been obtained in the range of temperature higher than 40 K.","PeriodicalId":426962,"journal":{"name":"International Workshop and Conference on Photonics and Nanotechnology","volume":"230 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Workshop and Conference on Photonics and Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.799424","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The ground state transition energy as various temperatures of a single quantum well structure has been calculated. The numerical technique called shooting method was developed to get eigen values and eigen functions. Passler's model and Aspnes's equation are adopted to calculate the energy gap (Eg) of Al0.3Ga0.7As and GaAs respectively. Our calculation has been tested by comparing the results to PL experimental data of Al0.3Ga0.7As / GaAs single quantum well. Good agreement has been found in the low temperature range (less than 40 K) and fair result has been obtained in the range of temperature higher than 40 K.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
量子阱结构跃迁能温度依赖性的射击法计算
计算了单量子阱结构在不同温度下的基态跃迁能。提出了一种称为射击法的数值方法来获取特征值和特征函数。采用Passler模型和Aspnes方程分别计算Al0.3Ga0.7As和GaAs的能隙(Eg)。将计算结果与Al0.3Ga0.7As / GaAs单量子阱的PL实验数据进行了比较。在较低的温度范围内(小于40 K)得到了较好的一致性,在高于40 K的温度范围内得到了较好的结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Application of reflection-spectrum envelope for sampled gratings Temperature-dependent photoluminescence investigation of narrow well-width InGaAs/InP single quantum well Photorefractive effect in Pb-based relaxor ferroelectric materials An aerosol optical thickness investigation in the Suvarnabhumi Airport using an inexpensive sunphotometer Determination of the optical constants and thickness of titanium oxide thin film by envelope method
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1