O. Musseau, S. Krawiec, P. Paillet, A. Courtot-Descharles, O. Gruber
{"title":"Generation and confinement of mobile charges in buried oxide of SOI substrates","authors":"O. Musseau, S. Krawiec, P. Paillet, A. Courtot-Descharles, O. Gruber","doi":"10.1109/RADECS.1999.858590","DOIUrl":null,"url":null,"abstract":"We analyze the mechanisms of generation and confinement of mobile protons resulting from hydrogen annealing of SOI buried oxides. Under standard preparation techniques, both fixed and mobile positive charges are generated in the buried oxide. A series of new experimental data investigates the ratio of fixed to mobile charges. The analysis of charge homogeneity within the sample reveals the basic role of diffusion in the oxide. Experimental data and atomic scale modeling emphasize the importance of Si-SiO/sub 2/ interface.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.1999.858590","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We analyze the mechanisms of generation and confinement of mobile protons resulting from hydrogen annealing of SOI buried oxides. Under standard preparation techniques, both fixed and mobile positive charges are generated in the buried oxide. A series of new experimental data investigates the ratio of fixed to mobile charges. The analysis of charge homogeneity within the sample reveals the basic role of diffusion in the oxide. Experimental data and atomic scale modeling emphasize the importance of Si-SiO/sub 2/ interface.
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