An Energy-Efficient LDO for Biomedical Implantable Devices

Dawei Li, Yang Zhou, Umamaheswara Rao Tida, Zilong Liu, X. Zou
{"title":"An Energy-Efficient LDO for Biomedical Implantable Devices","authors":"Dawei Li, Yang Zhou, Umamaheswara Rao Tida, Zilong Liu, X. Zou","doi":"10.1109/ICCS52645.2021.9697305","DOIUrl":null,"url":null,"abstract":"With the development of integrated circuits, miniaturized implantable devices have been proven a prospective treatment in clinics. As these devices need to acquire weak bio-signals, the ability to reject power ripple in noise-sensitive analog front-end is highly demanded. This paper presents an energy efficient low dropout regulator in biomedical implantable devices. The proposed circuit comprises conventional topology while adding a simple yet effective branch to overcome the limitation of the power supply rejection ratio. The LDO utilizes internal compensation to improve its stability with a 1 mA maximum load current. The LDO is designed in SMIC 0.18 μm 1P5M Mixed CMOS process, exhibiting a phase margin over 50° under all process, voltage and temperature corners. Its input voltage can be as low as 1.9 V when providing a 1.8 V voltage. The PSRR is −57.8 dB at DC and has still −40 dB at 20 KHz with a 1 mA load current. The quiescent current consumption is 23.6 μA with bandgap included.","PeriodicalId":163200,"journal":{"name":"2021 IEEE 3rd International Conference on Circuits and Systems (ICCS)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 3rd International Conference on Circuits and Systems (ICCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCS52645.2021.9697305","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

With the development of integrated circuits, miniaturized implantable devices have been proven a prospective treatment in clinics. As these devices need to acquire weak bio-signals, the ability to reject power ripple in noise-sensitive analog front-end is highly demanded. This paper presents an energy efficient low dropout regulator in biomedical implantable devices. The proposed circuit comprises conventional topology while adding a simple yet effective branch to overcome the limitation of the power supply rejection ratio. The LDO utilizes internal compensation to improve its stability with a 1 mA maximum load current. The LDO is designed in SMIC 0.18 μm 1P5M Mixed CMOS process, exhibiting a phase margin over 50° under all process, voltage and temperature corners. Its input voltage can be as low as 1.9 V when providing a 1.8 V voltage. The PSRR is −57.8 dB at DC and has still −40 dB at 20 KHz with a 1 mA load current. The quiescent current consumption is 23.6 μA with bandgap included.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
生物医学植入式装置的高能效LDO
随着集成电路的发展,小型化的植入式装置已被证明是一种有前景的治疗方法。由于这些器件需要采集微弱的生物信号,因此对噪声敏感模拟前端抑制功率纹波的能力提出了很高的要求。提出了一种用于生物医学植入装置的节能低差调节器。该电路包括传统的拓扑结构,同时增加了一个简单而有效的支路,以克服电源抑制比的限制。LDO利用内部补偿来提高其稳定性,最大负载电流为1ma。LDO采用中芯国际0.18 μm 1P5M混合CMOS工艺设计,在所有工艺、电压和温度角点下相位裕度均超过50°。在提供1.8 V电压时,其输入电压可低至1.9 V。PSRR在直流时为- 57.8 dB,在负载电流为1ma时,在20khz时仍为- 40 dB。静态电流消耗为23.6 μA(含带隙)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Design of Heating Simulator for Satellite Active Thermal Control System Defending against Thermal Covert Channel Attacks by Task Migration in Many-core System A 21.2-23-GHz Ultra-Low-Power Injection-Locked Frequency Tripler Using Current-Reuse Structure Structure Design and Characteristics of Sense-Switch pFlash Devices Studies on the Phase Characteristic of S-band RKA: Reducing RF Phase Jitter by Reducing Intense Pulse Fluctuation
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1