EXPONENTIAL ABSORPTION SPECTRUM AND DENSITY DISTRIBUTION OF ELECTRONIC STATES ON THE TAIL OF THE VALENCE ZONE OF AMORPHOUS SEMICONDUCTORS

O. O. Mamatkarimov, R. Ikramov, B. H. Kuchkarov, K. Muminov
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Abstract

The analytical expression of the spectrum, derived for the region of exponential absorption of amorphous semiconductors, is investi gated. The parameters in this expression that determine the slope of the tails of the allowed bands are determined by fitting to the exponential absorption spectrum, which are determined experim entally. For the Davis-Mott approximation, a new formula is derived from the Kubo-Greenwood formula, which determines the densities of electronic states at the tail of the valence band. Using these formulas and the experimentally determined exponential absorption spectrum, it is shown that it is possible to determine the density of electronic states at the tail of the valence band
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非晶半导体价带尾部电子态的指数吸收光谱和密度分布
研究了非晶半导体指数吸收区光谱的解析表达式。表达式中决定允许波段尾部斜率的参数是通过拟合实验确定的指数吸收光谱来确定的。对于Davis-Mott近似,从Kubo-Greenwood公式中导出了一个新的公式,该公式决定了价带尾部电子态的密度。利用这些公式和实验测定的指数吸收谱,可以确定价带尾部的电子态密度
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