Parallel type based on Si-IGBT and SiC-MOSFET inverter Research on Multifunctional Power Supply

Abstract

To improve the problem that the single power device inverter power supply cannot meet the requirements of power quality control under the new situation due to the poor high-frequency performance or high-cost limitation, this paper adopts the harmonic current frequency division control technology combined with the characteristics of Si IGBT and SiC MOSFET devices, and proposes a parallel multi-functional power supply scheme based on Si IGBT and SiC MOSFET inverters to compensate the harmonic current. The high-precision current tracking control is carried out through the fractional-order model predictive control, which improves the current control accuracy of the inverter power supply. The simulation and experimental results show that the scheme is safe, reliable and has various functions, and has a good ability of harmonic control and reactive power compensation.