A 6 bit linear binary RF DAC in 0.25µm SiGe BiCMOS for communication systems

M. Khafaji, H. Gustat, C. Scheytt
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引用次数: 8

Abstract

This paper presents a circuit technique to improve the frequency domain behavior of the binary weighted digital to analog convertors (DAC). It is shown that by adding a current buffer stage, the effect of one of the major drawbacks in this architecture, the impedance variation in every stage, is reduced. To verify the method, a fully binary 6bit 20.5Gsps DAC with 1W power dissipation and measured SFDR higher than 28.2dBc up to 6.2GHz input bandwidth was fabricated. The DAC produces 1Vpp differential output, and less than 60ps full scale rise time.
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用于通信系统的6位线性二进制射频DAC,采用0.25µm SiGe BiCMOS
提出了一种改善二元加权数模转换器频域性能的电路技术。结果表明,通过增加电流缓冲级,减小了该结构的主要缺点之一,即每个级的阻抗变化。为了验证该方法,制作了一个全二进制6bit 20.5Gsps的DAC,功耗为1W,在6.2GHz输入带宽下测量的SFDR高于28.2dBc。DAC产生1Vpp差分输出,满量程上升时间小于60ps。
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