QUBiC4X: An f/sub T//f/sub max/ = 130/140GHz SiGe:C-BiCMOS manufacturing technology witg elite passives for emerging microwave applications

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI:10.1109/BIPOL.2004.1365788

P. Deixler, A. Rodriguez, W. de Boer, H. Sun, R. Colclaser, D. Bower, N. Bell, A. Yao, R. Brock, Y. Bouttement, G. Hurkx, L. Tiemeijer, J. Paasschens, H.G.A. Huizing, D. Hartskeerl, P. Agrarwal, P. Magnée, E. Aksen, J. Slotboom

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引用次数: 37

Abstract

P. Deixler, A. Rodriguez, W. De Boer, H. Sun, R Colclaser, D. Bower, N. Bell, A. Yao’, RBrock’, Y. Bouttement.’, G.A.M. Hurkx4>, L.F. TiemeijeS, J.C.J. Paassehens4”, H.G.A Huizing”,D.M.H. Hartskeer14, P. Agamal’, P.H.C Magnee’, E. Aksen’ and J.W. Slotboom6 Philips Semiconductors, 2070 Route 52, P.O. Box 1279, Hopewell Junction, NY 12533, USA ’Philips RF Device Modeling Group, San Jose, USA; ’ Philips RF Modeling Group, Caen, France ‘ Philips Natlab, Eindboven, The Netherlands; ’ Philips Research Leuven, Leuven, Belgium; ‘Univ. Delft, Netherlands Email: Peter.Deixler@philips.com, Phone: ++1 845 902 1586 Abstract QUBiC4X is a cost-effective ultra-high-speed SiGe:C RF-BiCMOS technology for emerging microwave applications with NPN fr/f,, up to l30/140GHz, enhanced RF-oriented 2.5V CMOS, SiGe:C Power Amplifiers with 88% power-added efficiency, distinguished substrate isolation, full suite of elite high-density passives, 5 metal layers and an advanced design flow.

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QUBiC4X:一种f/sub T//f/sub max/ = 130/140GHz SiGe:C-BiCMOS制造技术，具有用于新兴微波应用的精英无源

P. Deixler, A. Rodriguez, W. De Boer, H. Sun, R . Colclaser, D. Bower, N. Bell, A. Yao '， R . brock '， Y. Bouttement。[，]胡克明[4]，李立明，李立明，李立明[4]Hartskeer14, P. Agamal '， p.h.c. magnet '， E. Aksen '和J.W. Slotboom6 Philips Semiconductors, 2070 Route 52, P.O. Box 1279, Hopewell Junction, NY 12533, USA; Philips RF Device Modeling Group, San Jose, USA;飞利浦射频建模集团，卡昂，法国;飞利浦实验室，埃因霍温，荷兰;鲁汶飞利浦研究中心，鲁汶，比利时;的大学。摘要QUBiC4X是一种具有成本效益的超高速SiGe:C RF-BiCMOS技术，适用于新兴的微波应用，具有NPN fr/f，高达130 / 140ghz，增强的rf定向2.5V CMOS, SiGe:C功率放大器具有88%的功率附加效率，卓越的衬底隔离，全套件精英高密度无源，5金属层和先进的设计流程。

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Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

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