{"title":"Tunable Microelectromechanical Capacitor With Wide Tuning Ranges","authors":"J.-M. Huang, A. Liu","doi":"10.1142/S1465876303001782","DOIUrl":null,"url":null,"abstract":"The objective of the paper presented here is to develop and demonstrate a MEMS silicon-based tunable capacitor for RF communications application. The tunable capacitor is made of single crystal silicon based on silicon-on-insulator (SOI) technology, and that has a continuous tuning range in excess of 300%. The electrical capacitance model will be provided here in details to demonstrate tuning characteristic and RF performance of tunable capacitor.","PeriodicalId":331001,"journal":{"name":"Int. J. Comput. Eng. Sci.","volume":"122 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Int. J. Comput. Eng. Sci.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1142/S1465876303001782","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The objective of the paper presented here is to develop and demonstrate a MEMS silicon-based tunable capacitor for RF communications application. The tunable capacitor is made of single crystal silicon based on silicon-on-insulator (SOI) technology, and that has a continuous tuning range in excess of 300%. The electrical capacitance model will be provided here in details to demonstrate tuning characteristic and RF performance of tunable capacitor.
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