{"title":"mm-Wave Tunnel Diode-Based Rectifier for Perpetual IoT","authors":"A. Eid, J. Hester, M. Tentzeris","doi":"10.1109/IEEECONF35879.2020.9329745","DOIUrl":null,"url":null,"abstract":"In this effort, the authors propose, for the first time, a tunnel diode-based rectifier for 5G/mm-wave energy harvesting. The tunnel diode, a unique semiconductor device with a negative resistance region, is often used in oscillator and amplifier circuits. However, this work exploits one new property for tunnel diodes, that sets a strong foundation for 5G long-range self-powered IoT nodes. This property is verified by the high sensitivity/low turn-on power and self-voltage-regulating behavior of the tunnel diode-based rectifier over a large range of load variations. Compared to a Schottky diode-based rectifier at 28GHz, the tunnel diode counterpart demonstrates a superior compatibility with the ambient mm-wave energy harvesting challenges and needs.","PeriodicalId":135770,"journal":{"name":"2020 IEEE International Symposium on Antennas and Propagation and North American Radio Science Meeting","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Symposium on Antennas and Propagation and North American Radio Science Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEECONF35879.2020.9329745","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In this effort, the authors propose, for the first time, a tunnel diode-based rectifier for 5G/mm-wave energy harvesting. The tunnel diode, a unique semiconductor device with a negative resistance region, is often used in oscillator and amplifier circuits. However, this work exploits one new property for tunnel diodes, that sets a strong foundation for 5G long-range self-powered IoT nodes. This property is verified by the high sensitivity/low turn-on power and self-voltage-regulating behavior of the tunnel diode-based rectifier over a large range of load variations. Compared to a Schottky diode-based rectifier at 28GHz, the tunnel diode counterpart demonstrates a superior compatibility with the ambient mm-wave energy harvesting challenges and needs.
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