{"title":"Role of Ion Irradiation in Resistive Memory Devices","authors":"S. Kaushik, S. Pandey, R. Singhal","doi":"10.1109/SMART52563.2021.9676282","DOIUrl":null,"url":null,"abstract":"The paper describes the effect of heavy ion irradiation on resistance switching behavior in zinc oxide deposited by RF sputtering on ITO-coated substrates. When annealed ZnO/ITO structures in oxygen atmosphere are bombarded with Ag+8 ions, they exhibit hysteresis in current-voltage curves caused by an increase in the resistance ratio, whereas the pristine samples (annealed in oxygen) exhibit linear characteristics. As compared to the changes in (OV-) oxygen vacancies at the interface, the changes in defect density caused by heavy ion irradiation give rise to metallic filaments, which are a main cause of resistance switching in ZnO.","PeriodicalId":356096,"journal":{"name":"2021 10th International Conference on System Modeling & Advancement in Research Trends (SMART)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 10th International Conference on System Modeling & Advancement in Research Trends (SMART)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMART52563.2021.9676282","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The paper describes the effect of heavy ion irradiation on resistance switching behavior in zinc oxide deposited by RF sputtering on ITO-coated substrates. When annealed ZnO/ITO structures in oxygen atmosphere are bombarded with Ag+8 ions, they exhibit hysteresis in current-voltage curves caused by an increase in the resistance ratio, whereas the pristine samples (annealed in oxygen) exhibit linear characteristics. As compared to the changes in (OV-) oxygen vacancies at the interface, the changes in defect density caused by heavy ion irradiation give rise to metallic filaments, which are a main cause of resistance switching in ZnO.
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