{"title":"One Mb bubble memory with support electronics","authors":"S. Nicolino","doi":"10.1109/ISSCC.1980.1156141","DOIUrl":null,"url":null,"abstract":"A 1Mb bubble memory system, including the bubble device, made on garnet material, and five silicon support devices, made with bipolar, CMOS, VMOS, NMOS and HMOS processes, will be discussed.","PeriodicalId":229101,"journal":{"name":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"XXIII 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1980.1156141","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A 1Mb bubble memory system, including the bubble device, made on garnet material, and five silicon support devices, made with bipolar, CMOS, VMOS, NMOS and HMOS processes, will be discussed.
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