Charlton Uwa Aigbekaen, S. Vallabhapurapu, Issac O Osunmakinde
{"title":"ReRAM memory based on dropcast PVA nano composite","authors":"Charlton Uwa Aigbekaen, S. Vallabhapurapu, Issac O Osunmakinde","doi":"10.1109/OI.2019.8908219","DOIUrl":null,"url":null,"abstract":"A resistive switching memory behavior has been observed in PVA incorporated with Aluminium doped Zinc Oxide (AZO) nano particles drop cast on Alumiuium tape. An ON/OFF ratio of about 4 orders of magnitude encourages and leads to the development of ReRAM memory cell. The conduction mechanisms of different segments before and after switching has indicated a clear change of activation energies involved.","PeriodicalId":330455,"journal":{"name":"2019 Open Innovations (OI)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Open Innovations (OI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OI.2019.8908219","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
A resistive switching memory behavior has been observed in PVA incorporated with Aluminium doped Zinc Oxide (AZO) nano particles drop cast on Alumiuium tape. An ON/OFF ratio of about 4 orders of magnitude encourages and leads to the development of ReRAM memory cell. The conduction mechanisms of different segments before and after switching has indicated a clear change of activation energies involved.
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