CMOS ultra-wideband low noise amplifier (UWB-LNA) using symmetric 3D RF integrated inductor

Abstract

This paper presents the design of a 2-16 GHz ultra wideband low noise amplifier (UWB LNA). The proposed UWB LNA employs a symmetric 3D RF integrated inductor. The UWB LNA has a gain of 11 ± 1.0 dB with NF less than 3.25 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8V supply. This UWB LNA is designed and simulated in the standard 0.18 μm CMOS technology.