A double-spacer technology for the formation of very narrow emitter (0.3 /spl mu/m) double-polysilicon bipolar transistors using 0.8-/spl mu/m photolithography
{"title":"A double-spacer technology for the formation of very narrow emitter (0.3 /spl mu/m) double-polysilicon bipolar transistors using 0.8-/spl mu/m photolithography","authors":"C. Tsai, B. Scharf, P. Garone, P. Humphries, K. O","doi":"10.1109/BIPOL.1995.493875","DOIUrl":null,"url":null,"abstract":"Emitter widths of 0.3 /spl mu/m on double-polysilicon bipolar transistors are achieved using 0.8-/spl mu/m photolithography and a double-spacer process. The emitter width reduction is confirmed with structural and electrical measurements. The double-spacer device exhibits superior low current f/sub T/ and f/sub max/.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"87 5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493875","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Emitter widths of 0.3 /spl mu/m on double-polysilicon bipolar transistors are achieved using 0.8-/spl mu/m photolithography and a double-spacer process. The emitter width reduction is confirmed with structural and electrical measurements. The double-spacer device exhibits superior low current f/sub T/ and f/sub max/.
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