{"title":"On lithography aware metal-fill insertion","authors":"Vikram B. Suresh, P. Vijayakumar, S. Kundu","doi":"10.1109/ISQED.2012.6187495","DOIUrl":null,"url":null,"abstract":"Manufacturability and lithographic printability are growing concerns with advancing technology nodes. The two most important parameters which influence the printability of a design are lithographic process corner and pattern density of the design. Dummy metal-fills are used to improve post-chemical mechanical polishing surface planarity. Conventional metal-fills do not consider impact of fill on lithographic printability or critical area-this is the focus of our paper. Although systematic yield due to lithographic distortions is gaining prominence, paniculate defects still remain a significant source of yield loss. Increasing design density in conjunction with growing manufacturability issues necessitates lithography aware paniculate limited yield loss analysis. In this work, we propose a novel lithography aware metal-fill insertion technique taking both statistical lithographic variations and critical area into consideration. Specifically, the main contributions of this work are a) analyzing the influence of metal-fills on line width variation and critical area, b) synthesis of variational lithography-aware metal-fill to improve design yield. The solution is been built on existing commercial tools. Experiments on ISCAS'85 benchmark circuits reveal that in 45nm technology, metal-fills worsen the linewidth variation by as much as 15% for more than 30% of nets compared to no fill. By contrast, proposed lithography aware metal-fill reduces linewidth variation by -25% and critical area by -35% compared to conventional metal-fill solutions without sacrificing density, planarity and performance targets.","PeriodicalId":205874,"journal":{"name":"Thirteenth International Symposium on Quality Electronic Design (ISQED)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Thirteenth International Symposium on Quality Electronic Design (ISQED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2012.6187495","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Manufacturability and lithographic printability are growing concerns with advancing technology nodes. The two most important parameters which influence the printability of a design are lithographic process corner and pattern density of the design. Dummy metal-fills are used to improve post-chemical mechanical polishing surface planarity. Conventional metal-fills do not consider impact of fill on lithographic printability or critical area-this is the focus of our paper. Although systematic yield due to lithographic distortions is gaining prominence, paniculate defects still remain a significant source of yield loss. Increasing design density in conjunction with growing manufacturability issues necessitates lithography aware paniculate limited yield loss analysis. In this work, we propose a novel lithography aware metal-fill insertion technique taking both statistical lithographic variations and critical area into consideration. Specifically, the main contributions of this work are a) analyzing the influence of metal-fills on line width variation and critical area, b) synthesis of variational lithography-aware metal-fill to improve design yield. The solution is been built on existing commercial tools. Experiments on ISCAS'85 benchmark circuits reveal that in 45nm technology, metal-fills worsen the linewidth variation by as much as 15% for more than 30% of nets compared to no fill. By contrast, proposed lithography aware metal-fill reduces linewidth variation by -25% and critical area by -35% compared to conventional metal-fill solutions without sacrificing density, planarity and performance targets.