L. Tan, W. Soong, S. Tan, Y. L. Goh, M. Steer, J. Ng, J. David, I. Marko, J. Chamings, J. Allam, S. Sweeney, A. Adams
{"title":"Dark current mechanisms in InxGa1-xAs1-yNy","authors":"L. Tan, W. Soong, S. Tan, Y. L. Goh, M. Steer, J. Ng, J. David, I. Marko, J. Chamings, J. Allam, S. Sweeney, A. Adams","doi":"10.1109/LEOS.2009.5343290","DOIUrl":null,"url":null,"abstract":"In order to extend the photo response of GaAs to optical telecommunication wavelengths, In and N can be incorporated into GaAs to yield a perfect lattice match of In<sub>x</sub>Ga<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub> with GaAs with a bandgap that strongly decreases with increasing N composition. The potential usage of such a material as photodetectors and photovoltaic applications has been reported.In this work, we investigate the dark current mechanisms in the In<sub>x</sub>Ga<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub> material.","PeriodicalId":269220,"journal":{"name":"2009 IEEE LEOS Annual Meeting Conference Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE LEOS Annual Meeting Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.2009.5343290","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In order to extend the photo response of GaAs to optical telecommunication wavelengths, In and N can be incorporated into GaAs to yield a perfect lattice match of InxGa1-xAs1-yNy with GaAs with a bandgap that strongly decreases with increasing N composition. The potential usage of such a material as photodetectors and photovoltaic applications has been reported.In this work, we investigate the dark current mechanisms in the InxGa1-xAs1-yNy material.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
