Performance Evaluation on NVMM Emulator Employing Fine-Grain Delay Injection

Yusuke Omori, K. Kimura
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引用次数: 3

Abstract

The emerging technology of byte-addressable nonvolatile memory chips is expected to enable larger main memory and lower power consumption than the traditional DRAM. It also realizes durable data structure without ordinary file systems. However, while enumerating the advantages of nonvolatile main memory (NVMM), its write-time expensive latency and higher energy consumption in comparision with a DRAM must be considered. These special characteristics of NVMM require new compiler techniques and OS support as well as new memory architectures. Several NVMM emulators built on real machines have been proposed to facilitate those software and hardware researches. Their designs were originally based on a simple coarse-grain delay model that injected additional clock cycles in the read and write requests sent to the memory controller. However, they could not utilize bank-level parallelism and row-buffer access locality, relied on by today’s memory modules, to exploit their performance. Therefore, a fine-grain delay model was recently proposed where the delay is injected for the primitive memory operations issued by the memory controller. In this paper, we implement both the coarse-grain and the fine-grain delay models on an SoC-FPGA board along with the use of Linux kernel modifications and several runtime functions. Then, the program behavior differences between two models are evaluated with SPEC CPU programs. The fine-grain model reveals the program execution time is influenced by the frequency of NVMM memory requests rather than the cache hit ratio. Bank-level parallelism and row-buffer access locality also affect the memory access delay, and the fine-grain model shows lower execution time for four of fourteen programs than the coarse-grain even when the former has longer total write latency.
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采用细粒度延迟注入的NVMM仿真器性能评价
新兴的字节可寻址非易失性存储器芯片技术有望实现比传统DRAM更大的主存储器和更低的功耗。它还实现了不需要普通文件系统的持久数据结构。然而,在列举非易失性主存储器(NVMM)的优点时,必须考虑到与DRAM相比,它的写时间昂贵的延迟和更高的能耗。NVMM的这些特殊特性需要新的编译器技术和操作系统支持以及新的内存体系结构。本文提出了几种基于真实机器的NVMM仿真器,以促进这些软件和硬件的研究。他们的设计最初是基于一个简单的粗粒度延迟模型,在发送到内存控制器的读写请求中注入额外的时钟周期。然而,它们不能利用银行级并行性和行缓冲区访问局部性来开发它们的性能,这是当今内存模块所依赖的。因此,最近提出了一种细粒度延迟模型,该模型将延迟注入到内存控制器发出的原始内存操作中。在本文中,我们在SoC-FPGA板上实现了粗粒度和细粒度延迟模型,并使用了Linux内核修改和几个运行时函数。然后,使用SPEC CPU程序评估两种模型之间的程序行为差异。细粒度模型显示,影响程序执行时间的是NVMM内存请求的频率,而不是缓存命中率。银行级并行性和行缓冲区访问局部性也会影响内存访问延迟,细粒度模型显示,在14个程序中,有4个程序的执行时间低于粗粒度模型,即使粗粒度模型的总写延迟更长。
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