A 1.4GHz CMOS Low-Phase Noise Voltage-Controlled Ring Oscillator

Ahmad Akmal Abd Ghani, A. Saparon
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引用次数: 13

Abstract

This paper describes a voltage controlled ring oscillator (VCO) with low-phase-noise. The VCO consists of two-stage fully differential delay cells proposed by Yan, has been analyzed and redesigned for its full switching performance using TSMC 0.18 mum CMOS technology with 2 V power supply. A fully switching differential delay cell is employed to reduce the phase noise of the ring oscillator. It utilizes dual-delay path techniques to achieve high oscillation frequency and obtain a wide tuning range. The VCO exhibits a very wide tuning range from 523 to 2111 MHz, which corresponds to a tuning range of 49.4%. Its power consumption is only 14.79 mW and its phase noise is about -103.3 dBc/Hz at 600 kHz offset from 1400 MHz. The phase noise of the VCO can be improved when more stages are applied in this VCO. Four-stages of differential delay are implemented later and it achieves -113.0595 dBc/Hz of phase noise which is 7.06 dB less than the first design. However, its power consumption is increased substantially to 100.3360 mW.
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一种1.4GHz CMOS低相位噪声压控环形振荡器
介绍了一种具有低相位噪声的压控环形振荡器(VCO)。该VCO由Yan提出的两级完全差分延迟单元组成,采用TSMC 0.18 mum CMOS技术和2v电源,对其进行了分析和重新设计,以实现其全开关性能。采用全开关差分延迟单元来降低环形振荡器的相位噪声。它利用双延迟路径技术实现高振荡频率和宽调谐范围。VCO具有523 ~ 2111 MHz的宽调谐范围,对应于49.4%的调谐范围。其功耗仅为14.79 mW,在1400 MHz的600 kHz偏移时相位噪声约为-103.3 dBc/Hz。在该压控振荡器中加入更多的级可以改善其相位噪声。随后实现了四级差分延迟,实现了-113.0595 dBc/Hz的相位噪声,比最初的设计降低了7.06 dB。然而,它的功耗大幅增加,达到100.3360兆瓦。
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