Analysis of defect structures in single crystals by ion scattering and channelling

A. Rasulov
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Abstract

The defect structures such as surface atomic steps and point defects have been studied by computer simulation of ion scattering and channelling processes. The energy and angular distributions of ions scattered and dechannelled from semi-infinite and isolated steps on the Cu(100) and GaP(100) surface as well as the characteristics of particles channelled through Cu(100) with point defect structures have been calculated. It was shown that the low energy ion scattering and channelling can be use successfully for analysis of defect structures in single crystals.
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单晶缺陷结构的离子散射和通道分析
通过计算机模拟离子散射和通道过程,研究了表面原子台阶和点缺陷等缺陷结构。计算了Cu(100)和GaP(100)表面半无限步和隔离步散射和脱通道离子的能量和角分布,以及通过Cu(100)具有点缺陷结构的通道粒子的特性。结果表明,低能离子散射和通道可以成功地用于单晶缺陷结构的分析。
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