Design and reliability challenges in nanometer technologies

S. Borkar, T. Karnik, V. De
{"title":"Design and reliability challenges in nanometer technologies","authors":"S. Borkar, T. Karnik, V. De","doi":"10.1145/996566.996588","DOIUrl":null,"url":null,"abstract":"CMOS technology scaling is causing the channel lengths to be sub-wavelength of light. Parameter variation, caused by sub-wavelength lithography, will pose a major challenge for design and reliability of future high performance microprocessors in nanometer technologies. In this paper, we present the impact of these variations on processor functionality, Predictability and reliability. We propose design and CAD solutions for variation tolerance. We conclude this paper with sofi error rate scaling trends and sofl error tolerant circuits for reliabilitv enhancement.","PeriodicalId":115059,"journal":{"name":"Proceedings. 41st Design Automation Conference, 2004.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"240","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. 41st Design Automation Conference, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/996566.996588","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 240

Abstract

CMOS technology scaling is causing the channel lengths to be sub-wavelength of light. Parameter variation, caused by sub-wavelength lithography, will pose a major challenge for design and reliability of future high performance microprocessors in nanometer technologies. In this paper, we present the impact of these variations on processor functionality, Predictability and reliability. We propose design and CAD solutions for variation tolerance. We conclude this paper with sofi error rate scaling trends and sofl error tolerant circuits for reliabilitv enhancement.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
纳米技术的设计和可靠性挑战
CMOS技术的缩放导致通道长度为光的亚波长。亚波长光刻技术引起的参数变化将对未来高性能纳米微处理器的设计和可靠性提出重大挑战。在本文中,我们提出了这些变化对处理器功能,可预测性和可靠性的影响。我们提出设计和CAD解决方案的变化公差。最后给出了sofi错误率缩放趋势和sofi容错电路以提高可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
STAC: statistical timing analysis with correlation Large-scale placement by grid-warping Security as a new dimension in embedded system design An integrated hardware/software approach for run-time scratchpad management Reliability-driven layout decompaction for electromigration failure avoidance in complex mixed-signal IC designs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1