Double Layer Anti-Reflective Coating of SiO2/ZnO for Photovoltaic Cell

Neha Mahnot, R. Mehra, Shikha Maheshwary
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Abstract

In this paper silicon based photo voltaic (PV) cells has been designed using double layer (SiO2/ZnO) anti-reflective coating (ARC). Here reflection spectrum of single layer anti-reflective coating (SLAR) of SiO2&ZnO individually and double layer anti-reflective coatings (DLAR) of SiO2/ZnO are compared. ZnO is a wide band semiconductor which provides good transparency and high electron mobility. The results indicated that the DLAR of SiO2/ZnO proved to be a valuable achievement to obtain highly absorbent surfaces. The results are obtained with planar surface of crystalline silicon substrate using Air Mass 1.5 Global (AM 1.5 G) spectrums. The average reflectance of 6.5% has been achieved within the range of 300-1400nm as maximum solar spectral irradiance of AM 1.5 G is in this region.
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光伏电池用SiO2/ZnO双层抗反射涂层
本文设计了采用双层(SiO2/ZnO)抗反射涂层(ARC)的硅基光伏电池。本文比较了SiO2/ZnO单层增透膜(SLAR)和SiO2/ZnO双层增透膜(DLAR)的反射光谱。ZnO是一种具有良好透明性和高电子迁移率的宽带半导体。结果表明,SiO2/ZnO的DLAR是获得高吸水性表面的一项有价值的成果。利用空气质量1.5全局(AM 1.5 G)光谱在晶体硅衬底的平面上得到了结果。由于AM 1.5 G的最大太阳光谱辐照度在300-1400nm范围内,平均反射率达到6.5%。
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