ErAs/InGaAs superlattice Seebeck coefficient

ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI:10.1109/ICT.2005.1519992

G. Zeng, J. Bowers, Yan Zhang, A. Shakouri, J. Zide, A. Gossard, Woochul Kim, A. Majumdar

{"title":"ErAs/InGaAs superlattice Seebeck coefficient","authors":"G. Zeng, J. Bowers, Yan Zhang, A. Shakouri, J. Zide, A. Gossard, Woochul Kim, A. Majumdar","doi":"10.1109/ICT.2005.1519992","DOIUrl":null,"url":null,"abstract":"InGaAs with embedded ErAs nano-particles is a promising material for thermoelectric applications. The incorporation of erbium arsenide metallic nanoparticles into the semiconductor can provide both charge carriers and create scattering centers for phonons. Electron filtering by heterostructure barriers can also enhance Seebeck coefficient by selective emission of hot electrons. 2.1 /spl mu/m-thick ErAs/InGaAs superlattices with a period of 10 nm InAlGaAs and 20 nm InGaAs were grown using molecular beam epitaxy, and the effective doping is from 2/spl times/10/sup 18/ to 1/spl times/10/sup 19/ cm/sup -3/. Special device patterns were developed for the measurement of the cross-plane Seebeck coefficient of the superlattice layers. Using these device patterns, the combined Seebeck coefficient of superlattice and the substrate were measured and the temperature drops through the superlattice and InP substrate were determined with 3D ANSYS/spl reg/ simulations. The Seebeck coefficient of the superlattice layers is obtained based on the measurements and simulation results.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICT.2005.1519992","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

Abstract

InGaAs with embedded ErAs nano-particles is a promising material for thermoelectric applications. The incorporation of erbium arsenide metallic nanoparticles into the semiconductor can provide both charge carriers and create scattering centers for phonons. Electron filtering by heterostructure barriers can also enhance Seebeck coefficient by selective emission of hot electrons. 2.1 /spl mu/m-thick ErAs/InGaAs superlattices with a period of 10 nm InAlGaAs and 20 nm InGaAs were grown using molecular beam epitaxy, and the effective doping is from 2/spl times/10/sup 18/ to 1/spl times/10/sup 19/ cm/sup -3/. Special device patterns were developed for the measurement of the cross-plane Seebeck coefficient of the superlattice layers. Using these device patterns, the combined Seebeck coefficient of superlattice and the substrate were measured and the temperature drops through the superlattice and InP substrate were determined with 3D ANSYS/spl reg/ simulations. The Seebeck coefficient of the superlattice layers is obtained based on the measurements and simulation results.

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ErAs/InGaAs超晶格塞贝克系数

嵌入era纳米粒子的InGaAs是一种很有前途的热电材料。在半导体中掺入砷化铒金属纳米粒子，既能提供载流子，又能产生声子的散射中心。异质结构势垒的电子过滤也可以通过选择性发射热电子来提高塞贝克系数。利用分子束外延技术生长出周期为10 nm和20 nm的2.1 /spl μ m/ m厚的InAlGaAs和InGaAs超晶格，有效掺杂范围从2/spl倍/10/sup 18/到1/spl倍/10/sup 19/ cm/sup -3/。开发了用于测量超晶格层的平面塞贝克系数的特殊器件图样。利用这些器件模式，测量了超晶格和衬底的联合塞贝克系数，并利用三维ANSYS/spl reg/ simulation计算了通过超晶格和InP衬底的温度降。根据测量和模拟结果，得到了超晶格层的塞贝克系数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ICT 2005. 24th International Conference on Thermoelectrics, 2005.

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