Influence of annealing on Co-doped ZnO DMSs thin films synthesized by nanocluster-beam technique

Zhiwei Zhao, Xuehua Li
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Abstract

Co-doped ZnO thin films fabricated by nanocluster-beam technique were annealed at 200, 400 and 700°C and the influence of temperature has been investigated. AFM images and UV absorbance spectra were carried out. Co-doped ZnO exhibited ferromagnetic at room temperature, and the saturation magnetization of films was also studied following the changing of annealing temperatures.
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退火对纳米团束技术合成共掺杂ZnO dss薄膜的影响
采用纳米团束技术制备了共掺杂ZnO薄膜,分别在200、400和700℃下进行了退火,并研究了温度的影响。进行了AFM图像和紫外吸收光谱分析。共掺杂ZnO在室温下表现出铁磁性,并研究了薄膜在退火温度变化后的饱和磁化性能。
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