{"title":"Silicon-On-Sapphire (SOS) Monolithic Transceiver Module Components for L- and S-Band","authors":"D. Laighton, J. Sasonoff, J. Selin","doi":"10.1109/MWSYM.1981.1129812","DOIUrl":null,"url":null,"abstract":"Phase-shifter and power amplifier functional sub-assemblies have been built using monolithic circuit techniques. Silicon-on-sapphire (S0S) material is used with active devices made directly in the silicon epi layer, with lumped thin-film components used as passive elements.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1981 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1981.1129812","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
Phase-shifter and power amplifier functional sub-assemblies have been built using monolithic circuit techniques. Silicon-on-sapphire (S0S) material is used with active devices made directly in the silicon epi layer, with lumped thin-film components used as passive elements.
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