{"title":"A Class-AB high-speed low-power op amp in BiCMOS technology","authors":"S. Sen, B. Leung","doi":"10.1109/BIPOL.1995.493857","DOIUrl":null,"url":null,"abstract":"A low-power, high-speed BiCMOS op amp is described. It uses a wideband, composite PMOS-vertical-NPN structure as a substitute for vertical-PNP transistors to realize a Class-AB input stage with very high small and large signal transconductances and op amp slew-rate.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493857","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A low-power, high-speed BiCMOS op amp is described. It uses a wideband, composite PMOS-vertical-NPN structure as a substitute for vertical-PNP transistors to realize a Class-AB input stage with very high small and large signal transconductances and op amp slew-rate.
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