Evaluation Of Resonating Channel Transistor In SOI Wafer

Abstract

A new type of oscillating transistor structure has been developed in thin film SOI applications.The oscillator's mechanical resonator has circular shape and vertical vibration. By using conventional SOI chips with other electronics it possible to add this resonator in same structure without complex process steps. The oscillating transistor can be used primarily in low frequencies (MHz). The component has one electrostatically driven electrode and two electrodes for drain and source parts. By using this component, the transistor can be driven electrostatically. It can have higher voltage current aplification -ratio than conventional transistor because of mechanic impact. For filter solutions coupling rods are not needed. The structure have been measured Q-value of 700 at 3,3MHz in normal room conditions