Power-aware soft error hardening via selective voltage scaling

Kai-Chiang Wu, Diana Marculescu
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引用次数: 29

Abstract

Nanoscale integrated circuits are becoming increasingly sensitive to radiation-induced transient faults (soft errors) due to current technology scaling trends, such as shrinking feature sizes and reducing supply voltages. Soft errors, which have been a significant concern in memories, are now a main factor in reliability degradation of logic circuits. This paper presents a power-aware methodology using dual supply voltages for soft error hardening. Given a constraint on power overhead, our proposed framework can minimize the soft error rate (SER) of a circuit via selective voltage scaling. On average, circuit SER can be reduced by 33.45% for various sizes of transient glitches with only 11.74% energy increase. The overhead in normalized power-delay-area product per 1% SER reduction is 0.64%, 1.33X less than that of existing state-of-the-art approaches.
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通过选择性电压缩放实现功率感知软错误硬化
由于当前的技术规模趋势,如缩小特征尺寸和降低电源电压,纳米级集成电路对辐射引起的瞬态故障(软错误)变得越来越敏感。软错误是存储器中的一个重要问题,现在是导致逻辑电路可靠性下降的一个主要因素。本文提出了一种利用双电源电压进行软误差强化的功率感知方法。在给定功率开销的约束下,我们提出的框架可以通过选择性电压缩放来最小化电路的软错误率。对于不同尺寸的瞬态故障,电路SER平均可降低33.45%,而能量仅增加11.74%。每降低1%的SER,标准化功率延迟面积产品的开销为0.64%,比现有最先进的方法少1.33倍。
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