Chemical bath deposited n-ZnO nanostructures on p-Si substrate for photo-detecting applications: Impact of annealing temperature

S. Paul, J. Sultana, A. Sarkar, A. Karmakar, S. Chattopadhyay
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Abstract

In this current work, the zinc oxide (ZnO) nanostructures are grown by employing chemical bath deposition (CBD) method. The as grown samples are annealed at 400°C and 600°C for 30 min in argon environment. A comparative study has been performed to study the systematic change of nanostructure morphology, chemical composition, crystallite structure and photo-sensing effects due to thermal annealing of the CBD grown ZnO nanostructure. The 400°C annealed sample exhibit nanosphere structure with significant enhancement in photo responsivity under UV illumination of 13mW/cm2 at 365 nm. The present study suggests that the responsivity of the CBD grown ZnO nanostructure can be improved by thermal annealing at 400°C.
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化学浴沉积在p-Si衬底上的n-ZnO纳米结构的光探测应用:退火温度的影响
本研究采用化学浴沉积法(CBD)制备氧化锌纳米结构。将长大后的样品分别在400℃和600℃氩气环境中退火30 min。对比研究了CBD生长ZnO纳米结构在热退火过程中纳米结构形态、化学成分、晶体结构和光感效应的系统变化。在365nm波长13mW/cm2的紫外光照射下,400°C退火后的样品呈现纳米球结构,光响应性显著增强。本研究表明,通过在400℃下进行热处理,可以提高CBD生长ZnO纳米结构的响应性。
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