M3D-ADTCO: Monolithic 3D Architecture, Design and Technology Co-Optimization for High Energy Efficient 3D IC

S. Thuries, O. Billoint, Sylvain Choisnet, R. Lemaire, P. Vivet, P. Batude, D. Lattard
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引用次数: 6

Abstract

Monolithic 3D (M3D) stands now as the ultimate technology to side step Moore’s Law stagnation. Due to its nanoscale Monolithic Inter-tier Via (MIV), M3D enables an ultrahigh density interconnect between Logic and Memory that is required in the field of highly energy efficient 3D integrated circuits (3D-ICs) designed for new abundant data computing systems. At design level, M3D still suffers from a lack of commercial tools, especially for Place and Route, precluding the capability to provide signoff M3D GDS. In this paper, we introduce M3D-ADTCO, an architecture, design and technology co-optimization platform aimed at providing signoff M3D GDS. It relies on a M3D Process Design Kit and the use of a commercial Place and Route tool. We demonstrate an area reduction of 23.61 % at iso performance and power compared to a 2D RISC-V micro-controller based System on Chip (SoC) while creating space to increase (2x) the RISC-V instruction memory.
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M3D-ADTCO:高能效3D集成电路的单片3D架构、设计和技术协同优化
单片3D (M3D)现在是突破摩尔定律停滞的终极技术。由于其纳米级单片层间通孔(MIV), M3D实现了逻辑和存储器之间的超高密度互连,这是为新的丰富数据计算系统设计的高能效3D集成电路(3D- ic)领域所需要的。在设计层面,M3D仍然缺乏商业工具,特别是对于Place和Route,这阻碍了提供签名M3D GDS的能力。在本文中,我们介绍了M3D- adtco,一个旨在提供签名M3D GDS的架构、设计和技术协同优化平台。它依赖于一个M3D过程设计套件和使用的商业地点和路线工具。我们展示了与基于片上系统(SoC)的2D RISC-V微控制器相比,在iso性能和功耗下面积减少了23.61%,同时创造了增加(2倍)RISC-V指令存储器的空间。
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