Analysis and optimization of high-power GaN lasers

Abstract

Summary form only given. 400 nm Fabry-Perot laser diodes are investigated that exhibit the highest output power measured thus far (420 mW). The active region includes two InGaN quantum wells, an AlGaN electron stopper layer, GaN waveguide layers, and superlattice cladding layers. Advanced laser simulation is used to analyze internal physical processes, to reveal performance limitations, and to explore optimization options. The laser model self-consistently combines 6x6 k.p band structure and gain calculations with two-dimensional simulations of wave guiding, carrier transport, and heat flux.