Highly efficient harmonic-tuned GaN HEMT power amplifier for a 2.45 GHz ISM band

Marcin Góralczyk
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引用次数: 3

Abstract

This paper presents a design of highly efficient high power amplifier with CGH40010 transistor. The amplifier provides more than 15W of output power and 61% PAE over a 2.4 GHz to 2.5 GHz frequency range. A method of harmonic tuning is applied in the design. By the use of this method it was possible to achieve even 30% more power than the transistor is specified to deliver, while maintaining high gain and efficiency.
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用于2.45 GHz ISM频段的高效谐波调谐GaN HEMT功率放大器
提出了一种基于CGH40010晶体管的高效大功率放大器的设计方案。该放大器在2.4 GHz至2.5 GHz频率范围内提供超过15W的输出功率和61%的PAE。设计中采用了谐波调谐的方法。通过使用这种方法,可以在保持高增益和效率的同时,实现比晶体管指定提供的功率多30%的功率。
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