Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression

Abstract

Advantages of optical links for data transmission are doubtless. Different types of optical interconnects for inter/intra chip links are under development. Electro-optical modulators (EOMs) are one of key elements of optical links. Transmission-type EOM for chip-to-chip optical interconnection is analysed by the method of single expression. Transmission properties of Fabry-Perot resonant type modulator consisting of electro-optical material embedded between Si/SiO2 distributed Bragg reflectors (DBRs) are analysed. From four possible types of DBRs the suitable structure has been chosen. Two semitransparent conducting electrodes for applying electrical signal to electro-optical material are parts of the nano-layered structure and are included in the electromagnetic model. As an external light source, a conventional laser diode of wavelength 1.55 $\mu m$ is taken. Efficiency of optical wave intensity modulation is analysed by means of influence of electro-optical material's permittivity change (under applied voltage) on resonator's maximal transmission peak shift. For the electro-optical material LiNbO3 of thickness about 1 mm the suitable resonance peak shift is obtained.