A Gated VCO for 10Gb/s PON Systems in 0.18µm CMOS

Gaowei Gu, En Zhu, Ye Lin
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引用次数: 1

Abstract

A 5GHz Gated VCO for burst-mode operation in 10Gbps GPON and EPON systems is presented. The GVCO consists of four stages of XNOR/XOR cell with voltage-controlled delays, and aligns output clock to burst data within 2 bits time. The GVCO has a tuning range from 4.4GHz to 6.2GHz. The phase noise of the GVCO in steady state circuit is -105dBc/Hz at 5MHz offset. The circuit is implemented in SMIC 0.18µm CMOS process, occupies an area of 425*480µm 2. The power consumption is 35mW (with I/O buffers).
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用于10Gb/s PON系统的0.18µm CMOS门控压控振荡器
提出了一种适用于10Gbps GPON和EPON系统突发模式工作的5GHz门控压控振荡器。GVCO由四级的XNOR/XOR单元组成,具有压控延迟,并在2位时间内将输出时钟对准突发数据。GVCO的调谐范围从4.4GHz到6.2GHz。稳态电路中GVCO在5MHz偏置时的相位噪声为-105dBc/Hz。该电路采用中芯国际0.18µm CMOS工艺实现,占地面积为425*480µm 2。功耗为35mW(带I/O缓冲器)。
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