{"title":"Functional 3-D magnetic nanostructures","authors":"J. Sautner, Nithya Jayapratha, V. Metlushko","doi":"10.1109/ICEAA.2010.5653873","DOIUrl":null,"url":null,"abstract":"Most of magnetic nano-structures today are ultrathin or nanostructured films and multilayers. The main challenge is to find a suitable technology to integrate and to contact nanostructures in a reliable manner. Here, we investigate the problem of contact integration into functional 3-D devices and evaluate the influence of 3-D magnetic layer geometry on performance of magneto-electronic devices. Real devices are truly 3-dimensional structures. Their topography must absolutely be taken into consideration during the design phase since their inherent non-planarity will profoundly affect their magnetization profile. Our initial results strongly indicate that the “non-flatness” of magnetic layer strongly influences the possible magnetic states, alters the switching mechanism and leads to totally new behavior, which was not observed in classic 2-D thin film magnetic structures.","PeriodicalId":375707,"journal":{"name":"2010 International Conference on Electromagnetics in Advanced Applications","volume":"79 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Electromagnetics in Advanced Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEAA.2010.5653873","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Most of magnetic nano-structures today are ultrathin or nanostructured films and multilayers. The main challenge is to find a suitable technology to integrate and to contact nanostructures in a reliable manner. Here, we investigate the problem of contact integration into functional 3-D devices and evaluate the influence of 3-D magnetic layer geometry on performance of magneto-electronic devices. Real devices are truly 3-dimensional structures. Their topography must absolutely be taken into consideration during the design phase since their inherent non-planarity will profoundly affect their magnetization profile. Our initial results strongly indicate that the “non-flatness” of magnetic layer strongly influences the possible magnetic states, alters the switching mechanism and leads to totally new behavior, which was not observed in classic 2-D thin film magnetic structures.