Y. Niida, Y. Kamada, T. Ohki, S. Ozaki, K. Makiyama, Y. Minoura, N. Okamoto, Masaru Sato, K. Joshin, Keiji Watanabe
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引用次数: 48
Abstract
We demonstrated a W-band high-power-density MMIC power amplifier with 80 nm InAlGaN/GaN HEMTs. The MMIC consists of two-stage cascade units, each of which has two transistors with the same gate periphery for a high gain and low-loss matching circuit. The MMIC achieved a maximum output power of 1.15 W and maximum PAE of 12.3 % at 86 GHz under CW operation. Its power density reached 3.6 W/mm, representing the highest performance of the W-band GaN HEMT MMIC power amplifier.
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