Dielectric relaxation study in Tantalum Pentoxide capacitors

J. Manceau, S. Bruyère, S. Jeannot, A. Sylvestre, P. Gonon
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引用次数: 4

Abstract

In this paper MIM (Metal-Insulator-Metal) Ta2O5 capacitor has been studied in term of dielectric relaxation over several thicknesses with a low frequency dielectric spectroscopy and current versus time measurement. A Maxwell-Wagner mechanism and resistance degradation has been identified. The resistance degradation follows the Space-Charge-Limited (SCL) theory. These two behaviours have the same activation energy and have been attributed to electrode polarisation mechanism created by mobile charges in the dielectric. Finally according to physical characterization the origin of these defects has been attributed to oxygen vacancies.
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五氧化二钽电容器的介电弛豫研究
本文利用低频介电光谱和电流随时间的测量,研究了金属-绝缘体-金属(MIM) Ta2O5电容器在不同厚度上的介电弛豫特性。麦克斯韦-瓦格纳机制和抗性退化已被确定。电阻退化遵循空间电荷限制(SCL)理论。这两种行为具有相同的活化能,并归因于电介质中移动电荷产生的电极极化机制。最后,根据物理表征,这些缺陷的起源归因于氧空位。
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