>300GHz fixed-frequency and voltage-controlled fundamental oscillators in an InP DHBT process

M. Seo, M. Urteaga, A. Young, V. Jain, Z. Griffith, J. Hacker, P. Rowell, R. Pierson, M. Rodwell
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引用次数: 43

Abstract

We report fundamental fixed-frequency and voltage-controlled oscillators operating at >300GHz fabricated in a 256nm InP DHBT technology. Oscillator designs are based on a differential series-tuned topology followed by a common-base buffer. Measured oscillation frequencies of fixed-frequency designs are 267.4, 286.8, 310.2, and 346.2GHz, at PDC=35mW. At optimum bias, the output power was measured to be −5.1, −6.9, −9.2, and −11.0 dBm for each design (no probe loss correction), with PDC≤115mW. Measured phase noise was −96.6dBc/Hz at 10MHz offset. Varactor-tuned designs demonstrated 10.6–12.3 GHz of tuning bandwidth.
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>300GHz定频和压控基频振荡器在InP DHBT工艺中的应用
我们报告了用256nm InP DHBT技术制造的工作频率>300GHz的基本固定频率和压控振荡器。振荡器设计基于微分串联调谐拓扑,然后是共基缓冲器。定频设计的实测振荡频率分别为267.4、286.8、310.2和346.2GHz, PDC=35mW。在最佳偏置下,每种设计的输出功率分别为- 5.1,- 6.9,- 9.2和- 11.0 dBm(无探头损耗校正),PDC≤115mW。在10MHz偏移时测得相位噪声为- 96.6dBc/Hz。变容管调谐设计展示了10.6-12.3 GHz的调谐带宽。
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