Cell Library Characterization at Low Voltage Using Non-linear Operating Point Analysis of Local Variations

R. Rithe, Sharon Chou, Jie Gu, Alice Wang, Satyendra R. Datla, G. Gammie, D. Buss, A. Chandrakasan
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引用次数: 5

Abstract

When CMOS is operated at a supply voltage of 0.5V and below, Random Do pant Fluctuations (RDFs) result in a stochastic component of logic delay that can be comparable to the nominal delay. Moreover, the Probability Density Function (PDF) of this stochastic delay can be highly non-Gaussian. The Non-Linear, Operating Point Analysis of Local Variations (NLOPALV) technique has been shown to be accurate and computationally efficient in simulating any point on the delay PDF of a logic Timing Path (TP). This paper applies the NLOPALV approach to characterizing the stochastic delay of logic cells. NLOPALV theory is presented, and NLOPALV is used to characterize a cell library designed in 28 nm CMOS. NLOPALV is accurate to within 5% compared to SPICE-based Monte Carlo analysis.
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利用非线性工作点局部变化分析低电压下的电池库特性
当CMOS在0.5V及以下的电源电压下工作时,随机波动(RDFs)会导致逻辑延迟的随机成分,可以与标称延迟相媲美。此外,这种随机延迟的概率密度函数(PDF)可以是非高斯的。非线性、局部变化工作点分析(NLOPALV)技术在模拟逻辑时序路径(TP)的延迟PDF上的任何点时都是准确的和计算效率高的。本文应用NLOPALV方法来表征逻辑单元的随机延迟。提出了NLOPALV理论,并利用NLOPALV对28nm CMOS设计的单元库进行了表征。与基于spice的蒙特卡罗分析相比,NLOPALV的准确度在5%以内。
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