{"title":"A Non-Quasi-Static SOI MOSFET Model","authors":"D. R. Burke, T. Brazil","doi":"10.1109/EMICC.2008.4772286","DOIUrl":null,"url":null,"abstract":"The static and large-signal behaviour of a new model for a submicron partially-depleted (PD) body-tied (BT) silicon-on-insulator (SOI) MOSFET was recently shown to give excellent agreement with measurements. Here, we complete the model validation with a detailed study of its small-signal capabilities up to a frequency of 50 GHz. Additionally, a new direct procedure is described enabling the extraction of a full parasitic network without the need for any on-wafer de-embedding structures.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"132 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2008.4772286","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
The static and large-signal behaviour of a new model for a submicron partially-depleted (PD) body-tied (BT) silicon-on-insulator (SOI) MOSFET was recently shown to give excellent agreement with measurements. Here, we complete the model validation with a detailed study of its small-signal capabilities up to a frequency of 50 GHz. Additionally, a new direct procedure is described enabling the extraction of a full parasitic network without the need for any on-wafer de-embedding structures.
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