T. D. Aliyeva, G. D. Abdinova, N. Akhundova, B. S. Barkhalov
{"title":"Electrical properties of the metal-semiconductor structures on the basis of Pb1-xMnxTe","authors":"T. D. Aliyeva, G. D. Abdinova, N. Akhundova, B. S. Barkhalov","doi":"10.1117/12.742599","DOIUrl":null,"url":null,"abstract":"The effect of an annealing at 100-110 °C on contact resistance (rk) and adhesive strength of the contacts to Pb1-xMnxTe/ (In-Ag-Au) structure in the temperature range ~77-300K have been investigated. It is found out that the effect of an annealing on rk is caused by both a diffusion of In and Ag atoms in the contact area and the volume of the crystals and the formation of an intermediate phases such as Ag2Te.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Photoelectronics and Night Vision Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.742599","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The effect of an annealing at 100-110 °C on contact resistance (rk) and adhesive strength of the contacts to Pb1-xMnxTe/ (In-Ag-Au) structure in the temperature range ~77-300K have been investigated. It is found out that the effect of an annealing on rk is caused by both a diffusion of In and Ag atoms in the contact area and the volume of the crystals and the formation of an intermediate phases such as Ag2Te.
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