Uncooled SiC MWIR detector based on optical signal

Abstract

Crystalline SiC has been doped with a p-type dopant using a laser doping technique to create an intermediate energy level within the bandgap of SiC. The energy gap between this acceptor level and the valence band of SiC is designed to match the midwave infrared (MWIR) wavelength (3–5 μm) of the photons that need to be detected. Although this study presents results pertaining to MWIR detection, the approach to creating intermediate energy levels can be utilized to fabricate crystalline semiconductor-based broadband detectors and emitters in the MWIR range.