Low temperature stacked electrodes for flexible crystalline semiconductor thin film solar cells

Weiquan Yang, Rui Li, Z. Ma, Weidong Zhou
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Abstract

Large area crystalline InP nanomembranes (NM) with p-i-n vertical junction were transferred to flexible plastic substrates, based on low temperature frame assisted membrane transfer process. Low temperature annealing-free stacked electrodes were investigated for the compatibility of energy efficient NM stacking and manufacturing processes. Here we report the properties of stacked contacts between n-InP NMs and different kinds of electrode materials, such as aluminum and indium tin oxide (ITO). The stacked InP NM-ITO contact appears to be excellent ohmic contact, with measured contact resistance of 0.45 ω•cm2. Flexible InP solar cells with stacked back ITO and Al contacts were also fabricated, based on 240 and 1000 nm thick InP NMs. The efficiency of the solar cell with back InP-ITO contact is much higher than the efficient of the cells with back InP-Al contact. Such low temperature energy efficient NM transfer and electrode stacking techniques are highly desirable for a wide range of thin film solar cell manufacturing processes.
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柔性晶体半导体薄膜太阳能电池的低温堆叠电极
基于低温框架辅助膜转移工艺,将具有p-i-n垂直结的大面积晶体InP纳米膜转移到柔性塑料衬底上。研究了低温无退火堆积电极的节能纳米堆积与制造工艺的相容性。本文报道了n-InP纳米材料与不同电极材料(如铝和氧化铟锡(ITO))之间的堆叠触点的性质。堆叠的InP纳米- ito触点表现出优异的欧姆触点,测量到的接触电阻为0.45 ω•cm2。基于240 nm和1000 nm厚度的InP纳米板,制备了具有堆叠ITO和Al触点的柔性InP太阳能电池。InP-ITO反向接触的太阳能电池效率远高于InP-Al反向接触的电池效率。这种低温节能纳米转移和电极堆叠技术是广泛的薄膜太阳能电池制造工艺所需要的。
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