Integration of high-performance V-band GAN MMIC HPA for the QVlift project

Alejandro Rodríguez, J. Cagigas, Noelia Santos, J. Moron, F. Vitobello, G. Parca, G. Valente, G. Codispoti
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引用次数: 1

Abstract

In the framework of the Horizon 2020 project QV-LIFT, funded by the European Commission, a V-band high power amplifier based on Gallium Nitride (GaN) Monolithic Microwave Integrated Circuits (MMIC) technology was designed and developed. Design manufacturing and on-wafer pulsed measurements of two runs of MMIC fabrication were performed and the best chipsets demonstrated peak output power of about 5W in pulsed mode. Waveguide modules were integrated and tested and are able to provide up to 2 W at 48 GHz in Continuous Wave (CW).
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QVlift项目的高性能v波段GAN MMIC HPA集成
在欧盟委员会资助的Horizon 2020项目QV-LIFT框架下,设计并开发了一种基于氮化镓(GaN)单片微波集成电路(MMIC)技术的v波段高功率放大器。设计制造和晶圆上的脉冲测量进行了两次运行的MMIC制造,最好的芯片组显示脉冲模式下的峰值输出功率约为5W。波导模块经过集成和测试,能够在48 GHz连续波(CW)下提供高达2 W的功率。
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