{"title":"New experimental evidence of latent interface-trap buildup in power VDMOSFETs","authors":"A. Jaksic, G. Ristić, M. Pejovic","doi":"10.1109/RADECS.1999.858592","DOIUrl":null,"url":null,"abstract":"The paper presents new experimental evidence of the latent interface-trap buildup during annealing of gamma-ray irradiated power VDMOSFETs. We try to reveal the nature of this still ill-understood phenomenon by isothermal annealing, switching temperature annealing and switching bias annealing experiments. Possible explanations of obtained experimental results are discussed in the context of several models for post-irradiation behavior of radiation-induced defects.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.1999.858592","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
The paper presents new experimental evidence of the latent interface-trap buildup during annealing of gamma-ray irradiated power VDMOSFETs. We try to reveal the nature of this still ill-understood phenomenon by isothermal annealing, switching temperature annealing and switching bias annealing experiments. Possible explanations of obtained experimental results are discussed in the context of several models for post-irradiation behavior of radiation-induced defects.
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