Concentration of point defects in wurtzite AlN: A hybrid functional study

Abstract

Formation energies and concentrations of the most relevant point defects in n-type wurtzite AlN are obtained by first-principle calculations employing a hybrid functional. We show that the incorporation of Si is favoured over O under N-rich growth conditions, but not under Al-rich conditions. The triply negatively charged Al vacancy is found to be the defect with the lowest formation energy in n-type AlN and it is therefore expected to be the main compensating acceptor. Under typical physical vapor-phase transport growth conditions, we predict Si concentrations of up to 1020 cm− 3 and net donor concentrations of about 1018 cm− 3, in good agreement with available experimental data.