Monte Carlo simulation of electron transport in amorphous silicon Schottky diodes

Abstract

Electron transport in reverse-biased amorphous silicon Schottky diodes has been studied by Monte Carlo simulation. These simulations have been applied to a time of flight geometry at various temperatures, and the results have been found to agree well with those from the literature. Simulations have also been used to investigate the response of the diode to step changes of bias. This case is of importance for the application of Schottky diodes to large-area X-ray sensors.