{"title":"Design of an improved bandgap reference in 180nm CMOS process technology","authors":"R. Akshaya, Sivaganesan Siva","doi":"10.1109/RTEICT.2017.8256651","DOIUrl":null,"url":null,"abstract":"This paper grants implementation and design of Bandgap reference circuit with 0.2ppm/ low temperature coefficient in 180nm CMOS process technology. The designed circuit achieves a simulated output voltage reference of 1.12V at room temperature (27°C) with the temperature range of −40°C to +125°C under supply voltage of 1.8V. The power consumption is 52.37uW at room temperature and active area is 81.4um∗63.43um. The designed circuit was implemented using Cadence Virtuoso and simulated using Spectre ADE.","PeriodicalId":342831,"journal":{"name":"2017 2nd IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 2nd IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RTEICT.2017.8256651","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
This paper grants implementation and design of Bandgap reference circuit with 0.2ppm/ low temperature coefficient in 180nm CMOS process technology. The designed circuit achieves a simulated output voltage reference of 1.12V at room temperature (27°C) with the temperature range of −40°C to +125°C under supply voltage of 1.8V. The power consumption is 52.37uW at room temperature and active area is 81.4um∗63.43um. The designed circuit was implemented using Cadence Virtuoso and simulated using Spectre ADE.
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