{"title":"GaAs FET large signal model and design applications","authors":"Y. Tajima, B. Wrona, K. Mishima","doi":"10.1109/IEDM.1980.189769","DOIUrl":null,"url":null,"abstract":"A large signal GaAs FET model is derived based on dc characteristics of the devices. Analytical expressions of nonlinear elements in the model are presented in a form convenient for circuit design. Power saturation and gain characteristics of a GaAs FET are studied theoretically and experimentally. An oscillator design employing the large signal model is demonstrated.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"162 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1980.189769","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A large signal GaAs FET model is derived based on dc characteristics of the devices. Analytical expressions of nonlinear elements in the model are presented in a form convenient for circuit design. Power saturation and gain characteristics of a GaAs FET are studied theoretically and experimentally. An oscillator design employing the large signal model is demonstrated.
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