V. Issakov, H. Knapp, M. Wojnowski, A. Thiede, W. Simburger
{"title":"A 22–39 GHz Passive mixer in SiGe:C bipolar technology","authors":"V. Issakov, H. Knapp, M. Wojnowski, A. Thiede, W. Simburger","doi":"10.1109/MWSYM.2010.5514827","DOIUrl":null,"url":null,"abstract":"Numerous industrial and automotive applications pose challenging requirements on receiver front-end linearity and DC power consumption. A convenient solution is the implementation of passive mixers. This is usually realized at microwave frequencies using diodes. This paper presents an on-chip integrated single-balanced passive mixer in Infineon's B7HF200 SiGe:C technology. The topology uses diode-connected npn transistors and a hybrid ring coupler implemented using onchip lumped elements. The mixer offers a good conversion loss below 10 dB over a very wide frequency range of 22 – 39 GHz at a moderate LO power of 3 dBm. The circuit exhibits an inputreferred 1dB compression point of −1.5 dBm and an IIP3 of 8.8 dBm. The chip size including the pads is 0.33 mm2. This passive bipolar mixer is integrated in SiGe:C technology without a Schottky diode option.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE MTT-S International Microwave Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2010.5514827","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
Numerous industrial and automotive applications pose challenging requirements on receiver front-end linearity and DC power consumption. A convenient solution is the implementation of passive mixers. This is usually realized at microwave frequencies using diodes. This paper presents an on-chip integrated single-balanced passive mixer in Infineon's B7HF200 SiGe:C technology. The topology uses diode-connected npn transistors and a hybrid ring coupler implemented using onchip lumped elements. The mixer offers a good conversion loss below 10 dB over a very wide frequency range of 22 – 39 GHz at a moderate LO power of 3 dBm. The circuit exhibits an inputreferred 1dB compression point of −1.5 dBm and an IIP3 of 8.8 dBm. The chip size including the pads is 0.33 mm2. This passive bipolar mixer is integrated in SiGe:C technology without a Schottky diode option.
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